US Patent Issued to KOKUSAI ELECTRIC on Aug. 5 for "Method of manufacturing semiconductor device, substrate processing apparatus, recording medium and method of processing substrate" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,079, issued on Aug. 5, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Method of manufacturing semiconductor device, substrate processing apparatus, recording medium and method of processing substrate" was invented by Hideki Horita (Toyama, Japan) and Ryota Horiike (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to...