US Patent Issued to Kokusai Electric on April 29 for "Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,684, issued on April 29, was assigned to Kokusai Electric Corp. (Tokyo).

"Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Katsuyoshi Harada (Toyama, Japan), Yoshitomo Hashimoto (Toyama, Japan) and Tatsuru Matsuoka (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: forming a film containing Si, O and N or a film containing Si and O on a substrate by performing a cycle a predetermined number of times under a condition where SiCl4 is not gas-phase decomposed, the cycle including non-simultaneously pe...