US Patent Issued to KOKUSAI ELECTRIC on April 22 for "Method of processing substrate for forming film containing silicon by supplying precursor containing Si-C bonds" (Japanese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,281,386, issued on April 22, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Method of processing substrate for forming film containing silicon by supplying precursor containing Si-C bonds" was invented by Kimihiko Nakatani (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes a method for forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a first precursor containing one or more Si-C bonds and not containing halogen to the substrate under a condition that at least a part of the Si-C bonds in the first precursor is held without being ...