ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,476, issued on April 22, was assigned to Kokusai Electric Corp. (Tokyo).

"Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium" was invented by Hiroshi Ashihara (Toyama, Japan), Motomu Degai (Toyama, Japan) and Takayuki Waseda (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein is a technique capable of selectively forming a thin film on a substrate while suppressing damage to other films of the substrate. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) removing a natural oxide film fr...