US Patent Issued to KOKUSAI ELECTRIC on April 15 for "Method of processing substrate and method of manufacturing semiconductor device by forming film" (Japanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,103, issued on April 15, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Method of processing substrate and method of manufacturing semiconductor device by forming film" was invented by Takayuki Waseda (Toyama, Japan), Takashi Nakagawa (Toyama, Japan), Kimihiko Nakatani (Toyama, Japan), Motomu Degai (Toyama, Japan), Takao Izaki (Toyama, Japan) and Yoshitomo Hashimoto (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A technique includes: (a) providing a substrate having a first surface and a second surface; (b) modifying the first surface to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the sub...