US Patent Issued to KNJ on Dec. 30 for "Part including silicon carbide layer and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,029, issued on Dec. 30, was assigned to KNJ Co. LTD (Asan-si, South Korea).

"Part including silicon carbide layer and manufacturing method thereof" was invented by Jong-hwa Weon (Cheonan-si, South Korea), Bun-hei Koo (Seoul, South Korea), In-su Hwang (Incheon, South Korea), Nam-ju Kim (Cheonan-si, South Korea), Myung-jin Ko (Daejeon, South Korea), Ji-hoon Lee (Dangjin-si, South Korea) and Hyeon-jun Cho (Cheongju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a part including silicon carbide layer and manufacturing method thereof, and the manufacturing method according to the present disclosure includ...