ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,870, issued on Sept. 9, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device and method of manufacturing the same" was invented by Shinya Kobayashi (Taito, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes first and second memory devices arranged in a first direction, and a plurality of first bump electrodes disposed between the first and the second memory devices. Each of the first and the second memory devices includes a first chip including a memory cell array and a plurality of first electrodes, a second chip including a peripheral circuit and a plurality of second electrodes, and a plural...