US Patent Issued to Kioxia on Sept. 9 for "Semiconductor device having an interconnection including plural metal layers, and manufacturing method thereof" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,839, issued on Sept. 9, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device having an interconnection including plural metal layers, and manufacturing method thereof" was invented by Akira Nakajima (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present embodiment comprises a first conductive layer. An interconnection is provided above the first conductive layer. A contact is provided between the first conductive layer and the interconnection. The interconnection includes a first metal layer containing hexagonal titanium (Ti) provided above the first conductive layer, a second met...