ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,622, issued on Sept. 9, was assigned to Kioxia Corp. (Tokyo).
"Memory device" was invented by Kenya Tashiro (Fujisawa Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A first inverter circuit including second and third transistors coupled at a third node and a second inverter circuit including fourth and fifth transistors coupled at a fourth node are coupled between first and second nodes. An eighth transistor is coupled between a gate of the third transistor and the third node. A ninth transistor is coupled between a gate of the fifth transistor and the fourth node. A state in which first and second voltages are applied to the first ...