US Patent Issued to Kioxia on Sept. 30 for "Semiconductor device and semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,907, issued on Sept. 30, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device and semiconductor memory device" was invented by Akifumi Gawase (Kuwana Mie, Japan) and Shuntaro Yamashita (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes first and second electrodes comprising a metal oxide an oxide semiconductor layer between the first and second electrodes, a gate electrode surrounding the oxide semiconductor layer, a gate insulating layer, a first insulating layer between the first and gate electrodes, a second insulating layer between the second and gate electrod...