US Patent Issued to Kioxia on Sept. 23 for "Magnetoresistance memory device and method for manufacturing magnetoresistance memory device" (South Korean, Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,273, issued on Sept. 23, was assigned to Kioxia Corp. (Tokyo).

"Magnetoresistance memory device and method for manufacturing magnetoresistance memory device" was invented by Hyung-woo Ahn (Seongnam-si, South Korea), Young Min Eeh (Yokohama Kanagawa, Japan), Tadaaki Oikawa (Seoul, South Korea) and Taiga Isoda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistance memory device includes a lower electrode, a barrier layer, a variable resistance layer, an upper electrode, and a first layer stack. The lower electrode contains one of amorphous carbon and amorphous carbon nitride. The barrier layer is provided on the lower electrode and...