ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,739, issued on Sept. 2, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor storage device" was invented by Shingo Nakazawa (Kamakura Kanagawa, Japan) and Yuki Inuzuka (Yokohama Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes a first word line, a second word line, a first select gate line, a second select gate line, a third select gate line, a fourth select gate line, a first memory pillar including a first memory cell connected to the first word line, a first select transistor connected to the first select gate line, a second memory cell connected to the second word line, and a second select t...