ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,950, issued on Sept. 2, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor device" was invented by Shinya Watanabe (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present embodiment includes a substrate having a first semiconductor circuit provided thereon. First pads are located on the substrate. A first insulating layer is located on an outer side of each of the first pads. Second pads are respectively bonded to the first pads. A second insulating layer is located on an outer side of each of the second pads and is bonded to the first insulating layer. The first pads each include a first co...