US Patent Issued to KIOXIA on Oct. 7 for "Semiconductor memory device for suppressing variations of impurity concentrations" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,596, issued on Oct. 7, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device for suppressing variations of impurity concentrations" was invented by Takayuki Maruyama (Yokkaichi, Japan), Yoshiaki Fukuzumi (Yokkaichi, Japan), Yuki Sugiura (Yokkaichi, Japan), Shinya Arai (Yokkaichi, Japan), Fumie Kikushima (Yokkaichi, Japan), Keisuke Suda (Yokkaichi, Japan) and Takashi Ishida (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a plurality of electrode layers stacked above a first semiconductor layer, a second semiconductor layer and a first film. The second semiconductor layer extends thro...