ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,599, issued on Oct. 7, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Hikari Tajima (Tokyo), Masayuki Kitamura (Yokkaichi Mie, Japan) and Seiichi Omoto (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes a stacked body in which a plurality of conductive layers containing molybdenum (Mo) are stacked to be spaced apart from each other in a first direction, a pillar structure including a semiconductor layer extending in the first direction in the stacked body, a partition structure extending in the first direction and in a second dir...