US Patent Issued to KIOXIA on Oct. 7 for "Semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,593, issued on Oct. 7, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device" was invented by Hiroyasu Sato (Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a plurality of first conductive layers and a plurality of first insulating layers alternately arranged in a first direction intersecting the substrate, a first semiconductor layer extending in the first direction and facing the first semiconductor layers and the first insulating layers, a first charge storage layer disposed between the first conductive layers and the first semiconductor layer, and a second semiconductor la...