ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,598, issued on Oct. 7, was assigned to Kioxia Corp. (Tokyo).

"Method of manufacturing semiconductor memory device and semiconductor memory device" was invented by Kyosuke Nanami (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a method of manufacturing a semiconductor memory device includes: repeating multiple times of a process of etching away one pair of first and second insulating layers of a stacked body exposed from a second mask layer, among a plurality of first and second insulating layers, with retracting the second mask layer in a first direction toward a first side by slimming; removing the s...