US Patent Issued to Kioxia on Oct. 28 for "Semiconductor storage device including a low on-resistance joint between arrays" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,740, issued on Oct. 28, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device including a low on-resistance joint between arrays" was invented by Ryota Fujitsuka (Yokkaichi, Japan), Ryota Suzuki (Yokkaichi, Japan) and Kenta Yamada (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes a first stack including a plurality of first electrode films stacked in a first direction. A second stack is provided above the first stack and includes a plurality of second electrode films that are stacked in the first direction. A first column portion is provided in the first stack to extend in the firs...