US Patent Issued to KIOXIA on Oct. 28 for "Semiconductor flash memory device with voltage control on completion of a program operation and subsequent to completion of the program operation" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,517, issued on Oct. 28, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor flash memory device with voltage control on completion of a program operation and subsequent to completion of the program operation" was invented by Kenrou Kikuchi (Yokohama, Japan) and Yasuhiro Shimura (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a memory cell array including a plurality of NAND strings, each of the plurality of NAND strings including a plurality of memory cell transistors connected to each other in series; a plurality of word lines commonly connected to the plurality of memory strings and connecte...