US Patent Issued to Kioxia on Oct. 28 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,748, issued on Oct. 28, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Shoji Aota (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes a substrate, a first transistor, a second transistor, a first insulating portion, and a second insulating portion. The first transistor includes a first diffusion region and a second diffusion region, a first gate insulating film, and a first gate electrode. The second transistor includes a third diffusion region and a fourth diffusion region, a second gate insula...