US Patent Issued to KIOXIA on Oct. 28 for "Manufacturing method of a semiconductor device and method for creating a layout thereof" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,680, issued on Oct. 28, was assigned to KIOXIA Corp. (Tokyo).

"Manufacturing method of a semiconductor device and method for creating a layout thereof" was invented by Kosuke Yanagidaira (Fujisawa, Japan) and Chikaaki Kodama (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device of one embodiment of the present invention includes: forming an insulation layer to be processed over a substrate; forming a first sacrificial layer in a first area over the substrate, the first sacrificial layer being patterned to form in the first area a functioning wiring connected to an element; forming a second ...