US Patent Issued to Kioxia on Oct. 21 for "Semiconductor storage device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,095, issued on Oct. 21, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device" was invented by Ryota Nihei (Yokkaichi Mie, Japan) and Koji Matsuo (Ama Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor storage device has first and second gate electrodes extending in one direction. A first semiconductor layer is between the first gate electrode and the second gate electrode. A second semiconductor layer is also between the first semiconductor layer and the second gate electrode but separated from the first semiconductor layer. A third semiconductor layer is between the first gate ele...