ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,443, issued on Oct. 21, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor device" was invented by Mayuka Ojima (Yokohama, Japan), Sachiyo Ito (Kawasaki, Japan) and Takuya Konno (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to an embodiment includes a substrate, a transistor, an insulating layer, and a first sealing portion. The substrate includes a first region, and a second region provided to surround an outer periphery of the first region. The transistor is provided on the substrate in the first region. The insulating layer is provided above the transistor and over the first region and the sec...