US Patent Issued to KIOXIA on Oct. 21 for "Semiconductor device, substrate, and method for manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,453, issued on Oct. 21, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device, substrate, and method for manufacturing semiconductor device" was invented by Keiichi Niwa (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a first surface, a second surface opposite to the first surface, conductive connections provided on the first surface, and columnar electrodes each extending from a corresponding one of the conductive connections toward the second surface, each of the columnar electrodes having a tapered shape; and a semiconductor chip having a third surface facing the first ...