ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,100, issued on Oct. 21, was assigned to Kioxia Corp. (Tokyo).
"Magnetic memory device" was invented by Naoki Akiyama (Seoul, South Korea), Kenichi Yoshino (Seongnam-si, South Korea), Kazuya Sawada (Seoul, South Korea), Hyungjun Cho (Seoul, South Korea) and Takuya Shimano (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a magnetic memory device includes a plurality of memory cells each including a magnetoresistance effect element and a switching element provided on a lower layer side of the magnetoresistance effect element and connected in series to the magnetoresistance effect element. The switching ele...