US Patent Issued to Kioxia on Oct. 14 for "Semiconductor storage device and method for manufacturing semiconductor storage device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,223, issued on Oct. 14, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device and method for manufacturing semiconductor storage device" was invented by Hiroki Kitayama (Yokkaichi Mie, Japan), Tomotaka Ariga (Yokkaichi Mie, Japan), Mitsuo Ikeda (Yokkaichi Mie, Japan), Daisuke Ikeno (Yokkaichi Mie, Japan) and Akihiro Kajita (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor storage device includes a memory pillar extending in a first direction. The memory pillar includes a tunnel insulation film, a charge storage layer on the tunnel insulation film, and a first block insulat...