US Patent Issued to KIOXIA on Oct. 14 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,681, issued on Oct. 14, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device and method for manufacturing the same" was invented by Yasunori Iwashita (Yokkaichi Mie, Japan), Shinya Arai (Yokkaichi Mie, Japan), Keisuke Nakatsuka (Kobe Hyogo, Japan) and Hiroaki Ashidate (Mie Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a first metal pad in each of a plurality of first regions on a first substrate so that warpage is generated on the first substrate. The method further includes forming a second metal pad in each of a plurality of second regions on a second substrate vi...