US Patent Issued to Kioxia on Nov. 4 for "Three-dimensional type NAND memory device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,722, issued on Nov. 4, was assigned to Kioxia Corp. (Tokyo).

"Three-dimensional type NAND memory device" was invented by Tatsufumi Hamada (Nagoya Aichi, Japan), Yosuke Mitsuno (Yokkaichi Mie, Japan), Tomohiro Kuki (Yokkaichi Mie, Japan) and Yusuke Morikawa (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film alternately including first layers and second layers in a first direction, forming a hole extending in the first direction in the stacked film, and forming a first insulator on a side face of the stacked film in the hole. The method...