US Patent Issued to KIOXIA on Nov. 4 for "Semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,706, issued on Nov. 4, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device" was invented by Mutsumi Okajima (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a memory cell array including memory cells, each including an oxide semiconductor transistor; a first insulating layer disposed above the memory cell array; a first wiring layer disposed between the memory cell array and the first insulating layer; a second insulating layer extending in a vertical direction. The second insulating layer has an annular cross-section. The semiconductor memory device includes a third insulatin...