US Patent Issued to KIOXIA on Nov. 4 for "Semiconductor device for preventing an increase in resistance difference of an electrode layer" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. RE50,657, issued on Nov. 4, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device for preventing an increase in resistance difference of an electrode layer" was invented by Wataru Sakamoto (Yokkaichi, Japan), Hiroshi Nakaki (Yokkaichi, Japan) and Hanae Ishihara (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of the embodiment includes a stacked body, a first insulating layer, first and second staircase portions 2, and a second insulating layer 46. The stacked body includes a first electrode layer 41 (WLDD) and a second electrode layer 41 (SGD). The first and second staircase portions 2 are provided in a first en...