ALEXANDRIA, Va., Nov. 6 -- United States Patent no. RE50,658, issued on Nov. 4, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor device" was invented by Kosuke Yanagidaira (Fujisawa, Japan) and Kazuhide Yoneya (Sagamihara, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes a first element isolating area, a first element area surrounding the first element isolating area, a second element isolating area surrounding the first element area a first gate electrode provided on and across the first element isolating area, the first element area, and the second element isolating area, and a second gate electrode isolated from the first gate electrode ...