ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,715, issued on Nov. 4, was assigned to KIOXIA Corp. (Tokyo).
"Semiconductor device" was invented by Keitaro Inoue (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate and a transistor. The transistor has a first diffusion region and a second diffusion region provided in the substrate, a gate insulating film provided over the substrate between the first diffusion region and the second diffusion region, and a gate electrode positioned on the gate insulating film. The semiconductor device further includes an internal layer positioned in the substrate, wherein the internal layer has a first conc...