US Patent Issued to Kioxia on Nov. 25 for "Semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,774, issued on Nov. 25, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Masato Suzuki (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first wafer and a second wafer. The first wafer and the second wafer include memory regions, and kerf regions including a first region and a second region. The first wafer includes a semiconductor substrate, and electrodes. The electrodes are not disposed in the first region, or the semiconductor substrate has a surface on a side of the second wafer including a first portion disposed in the first region and a second portion, ...