US Patent Issued to Kioxia on Nov. 25 for "Semiconductor device and method of manufacturing a semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,788, issued on Nov. 25, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device and method of manufacturing a semiconductor device" was invented by Susumu Yamamoto (Yokkaichi Mie, Japan), Tsutomu Fujita (Yokkaichi Mie, Japan), Takeori Maeda (Mie Mie, Japan), Satoshi Hongo (Yokkaichi Mie, Japan), Gen Toyota (Yokkaichi Mie, Japan), Eiichi Shin (Yokkaichi Mie, Japan) and Yukio Katamura (Mie Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of stacked bodies on a substrate, each of the stacked bodies includes a plurality of semiconducto...