ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,733, issued on Nov. 18, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Harumi Seki (Kawasaki, Japan), Masamichi Suzuki (Koto, Japan), Reika Tanaka (Yokohama, Japan), Kensuke Ota (Yokohama, Japan) and Yusuke Higashi (Zushi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device according to an embodiment includes a stacked body in which a gate electrode layer and a first insulating layer are alternately stacked in a first direction, a semiconductor layer in the stacked body and extending in the first direction, a second insulating layer between the semiconductor layer and the stacked bo...