US Patent Issued to KIOXIA on Nov. 11 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,307, issued on Nov. 11, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Tomoyuki Funabasama (Yokkaichi Mie, Japan) and Toshitaka Miyata (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a transistor. The transistor includes: a gate insulating film formed on a semiconductor substrate; a gate electrode formed on the gate insulating film and containing germanium at least in an upper region of the electrode; a source region formed in the semiconductor substrate; and a drain region formed in the semiconductor substrate."

The...