US Patent Issued to Kioxia on Nov. 11 for "Method of manufacturing a semiconductor device with selectively formed nitride film" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,280, issued on Nov. 11, was assigned to Kioxia Corp. (Tokyo).

"Method of manufacturing a semiconductor device with selectively formed nitride film" was invented by Yuta Kamiya (Nagoya Aichi, Japan), Kenichiro Toratani (Yokkaichi Mie, Japan), Kazuhiro Matsuo (Kuwana Mie, Japan), Shoji Honda (Kuwana Mie, Japan), Takuya Hirohashi (Ebina Kanagawa, Japan), Borong Chen (Kawasaki Kanagawa, Japan) and Kota Takahashi (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a first film including oxygen, forming a second film including nitrogen, etching surfaces of the first film an...