ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,494, issued on May 27, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor storage device" was invented by Yasuhito Yoshimizu (Yokkaichi Mie, Japan) and Hiroshi Nakaki (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes first and second stacks, and first to fourth semiconductor layers. The first stack includes first conductive layers and first insulating layers alternately stacked in a first direction. The first semiconductor layer extends through the first stack. The second semiconductor layer extends in a second direction above the first stack and connected to the first semiconductor layer....