US Patent Issued to KIOXIA on May 27 for "Semiconductor memory device and method of manufacturing semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,497, issued on May 27, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device and method of manufacturing semiconductor memory device" was invented by Fumie Kikushima (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a plurality of first conductive layers, a second conductive layer, a first pillar, and a second pillar. The plurality of first conductive layers are stacked over the substrate in a first direction. The second conductive layer is disposed over the plurality of first conductive layers. The first pillar extends inside the plurality of first conductive layers in ...