ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,499, issued on May 27, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Tatsuki Koshida (Yokkaichi, Japan), Takayuki Ishikawa (Yokkaichi, Japan), Kenzo Manabe (Yokkaichi, Japan) and Daisuke Kuwabara (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a semiconductor layer extending in a first direction, a conductive layer opposed to the semiconductor layer in a second direction intersecting with the first direction, an electric charge accumulating layer disposed between the semiconductor layer and the conductive layer, a first insulating layer disposed between the...