ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,859, issued on May 27, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Hiroshi Maejima (Tokyo), Katsuaki Isobe (Yokohama Kanagawa, Japan), Nobuaki Okada (Yokohama Kanagawa, Japan), Hiroshi Nakamura (Fujisawa Kanagawa, Japan) and Takahiro Tsurudo (Yokohama Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device according to an embodiment includes a substrate, a first memory cell, a first bit line, a first word line, a first transistor, and a second transistor. The first memory cell is provided above the substrate. The first bit line extends in a first direction. The first bit li...