ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,844, issued on May 27, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Tomoya Sanuki (Yokkaichi, Japan), Hiroshi Maejima (Tokyo) and Tetsuaki Utsumi (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes a memory cell, a first voltage generator and a second voltage generator. The memory cell is provided above a substrate. The first voltage generator is provided between the substrate and the memory cell. The first voltage generator is configured to generate a first voltage to be supplied to the memory cell. The second voltage generator is ...