ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,328, issued on May 20, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device and method for manufacturing the same" was invented by Kyosuke Nanami (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device according to an embodiment includes: a stacked body in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked one by one; and a plurality of first plate-like portions that penetrate the stacked body in a stacking direction thereof and cross the stacked body in a first direction intersecting the stacking direction, the plurality of first plate-like portion...