US Patent Issued to KIOXIA on May 20 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,017, issued on May 20, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Masayuki Kitamura (Yokkaichi Mie, Japan), Takuya Hirohashi (Ebina Kanagawa, Japan), Shigeru Kinoshita (Yokohama Kanagawa, Japan) and Hiroshi Toyota (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes: a stacked body including an insulating layer, and a conductive layer containing molybdenum; an aluminum oxide layer provided between the insulating layer and the conductive layer; and a protective layer in contact with the alumi...