US Patent Issued to Kioxia on May 20 for "Semiconductor device, semiconductor memory device, and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,065, issued on May 20, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device, semiconductor memory device, and method for manufacturing semiconductor device" was invented by Tomoki Ishimaru (Yokkaichi Mie, Japan), Shinji Mori (Nagoya Aichi, Japan), Kazuhiro Matsuo (Kuwana Mie, Japan), Keiichi Sawa (Yokkaichi Mie, Japan) and Kenichiro Toratani (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of an embodiment includes a first electrode, a second electrode, a first oxide semiconductor layer between the first electrode and the second electrode, the first oxide semiconductor layer containing in, Zn, and a ...