ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,013, issued on May 20, was assigned to KIOXIA Corp. (Tokyo).
"Non-volatile memory device" was invented by Hiroki Yamashita (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between ea...