US Patent Issued to Kioxia on May 20 for "Magnetoresistance memory device and method of manufacturing magnetoresistance memory device" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,251, issued on May 20, was assigned to Kioxia Corp. (Tokyo).

"Magnetoresistance memory device and method of manufacturing magnetoresistance memory device" was invented by Takao Ochiai (Seoul, South Korea), Kenichi Yoshino (Seongnam-si, South Korea), Kazuya Sawada (Seoul, South Korea) and Naoki Akiyama (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "In general, according to one embodiment, a magnetoresistance memory device includes: a first conductor; a silicon oxide on the first conductor; a second conductor; a first layer stack on the second conductor. The silicon oxide includes a dopant and has a first part on the first conducto...