ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,565, issued on May 13, was assigned to KIOXIA Corp. (Tokyo).
"Semiconductor storage device" was invented by Takashi Fukushima (Mie, Japan), Yuji Sakai (Mie, Japan), Hiroshi Itokawa (Mie, Japan), Tatsunori Isogai (Mie, Japan) and Ryosuke Sawabe (Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes: a plurality of conductive layers arranged in a first direction; a semiconductor layer extending in the first direction and facing the plurality of conductive layers; a charge storage layer provided between the plurality of conductive layers and the semiconductor layer; a first structure disposed apart from the s...