ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,581, issued on May 13, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device and method of manufacturing the same" was invented by Kyungmin Jang (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to an embodiment, a semiconductor memory device includes a semiconductor substrate, a control circuit arranged on the semiconductor substrate, and a memory cell array arranged above the control circuit. The memory cell array includes a plurality of three-dimensionally-arranged memory cells, and is controlled by the control circuit. A first nitride layer is arranged between the control circuit and the memory cell array, a...