ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,566, issued on May 13, was assigned to KIOXIA Corp. (Tokyo).
"Semiconductor memory device and method for manufacturing the same" was invented by Shinya Fujise (Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes a first stacked body including a first insulating film and a first conductive film alternately stacked in a first direction. A plurality of first columnar bodies extend in a first stacked body in the first direction and include a first semiconductor portion. A second insulating film is disposed on the first stacked body and includes a material different from that of th...